PART |
Description |
Maker |
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
L88016-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G22L-200 BLF7G22LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|